au.\*:("CHURILOV, A. B")
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Quantum size effect in the photoluminescence of porous silicon layersASNIN, V. M; AVERKIEV, N. S; CHURILOV, A. B et al.Solid state communications. 1993, Vol 87, Num 9, pp 817-820, issn 0038-1098Article
Condensat électron-trou bidimensionnel sur la surface du germaniumASNIN, V. M; ROGACHEV, A. A; STEPANOV, V. I et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1987, Vol 45, Num 9, pp 436-439, issn 0370-274XArticle
Etat fondamental d'un plasma bidimensionnel d'électrons-trous à la surface d'un semiconducteurASNIN, V. M; STEPANOV, V. I; CHURILOV, A. B et al.Fizika tverdogo tela. 1987, Vol 29, Num 11, pp 3203-3209, issn 0367-3294Article
Different morphology aspects of n-type porous siliconBUCHIN, E. YU; CHURILOV, A. B; PROKAZNIKOV, A. V et al.Applied surface science. 1996, Vol 102, pp 431-435, issn 0169-4332Conference Paper
Fine structure of the red photoluminescence band of porous siliconAVERKIEV, N. S; ASNIN, V. M; MARKOV, I. I et al.JETP letters. 1992, Vol 55, Num 11, pp 657-660, issn 0021-3640Article